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SCMOS Design Flow
SCMOS Design Kits
Projects submitted to MOSIS for fabrication can be designed using
either layout design rules and layers specific to a process (vendor
native rules) or (for some
processes) vendor-independent,
scalable rules
(SCMOS rules).
These rule sets cannot be mixed within a design.
The table below contains links to design kits, technology files, cell
libraries, IP, and other design support for a variety of CAD tools for
various processes availble
through MOSIS that use SCMOS rules.
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Foundry
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Comparable Process1
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Technology Codes
(Link to Layer Map)
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Lambda
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Design Kit
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Simulation
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DRC, LVS, Extraction
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Cell Libraries
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Pads
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TSMC
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0.35 micron,
1P4M, Silicided,
CL035 (TSMC35_SIL)
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SCN4M
SCN4M_SUBM
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0.25
0.20
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NCSU Cadence Design
Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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NCSU CDK4
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Tanner (SUBM)
CIF
GDS
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SCMOS_SUBM
CIF
GDS
Magic
NCSU CDK
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0.35 micron,
2P4M, Polycided
CM035 (TSMC35_P2)
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SCN4ME
SCN4ME_SUBM
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0.25
0.20
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NCSU Cadence Design
Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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NCSU CDK4
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Tanner (SUBM)
CIF
GDS
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Magic
NCSU CDK
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0.25 micron,
1P5M,
CL025/CR025 (CM025)
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SCN5M_SUBM
SCN5M_DEEP
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0.15
0.10
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NCSU Cadence Design
Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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NCSU CDK4
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Tanner (DEEP)
CIF
GDS
Virginia Tech (DEEP2)
Oklahoma State (SUBM3)
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SCMOS_DEEP
CIF
GDS
Magic
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0.18 micron
1P6M
CL018 CR018 (CM018)
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SCN6M_SUBM
SCN6M_DEEP
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0.10
0.09
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NCSU Cadence Design
Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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NCSU CDK4
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Oklahoma State (SUBM3)
Virginia Tech (DEEP2)
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ON Semi
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0.50 micron, 1P3M,
C5
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SCN3M
SCN3M_SUBM
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0.35
0.30
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NCSU Cadence Design
Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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Cadence, Diva
NCSU CDK4
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Tanner (SUBM)
CIF
GDS
Oklahoma State (SUBM3)
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SCMOS_SUBM
CIF
GDS
Magic
NCSU CDK
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0.50 micron, 2P3M,
C5
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SCN3ME
SCN3ME_SUBM
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0.35
0.30
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NCSU Cadence Design Kit (CDK),
Mentor
ASIC Design Kit,
Magic,
Electric
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BSIM3v3
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NCSU CDK4
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Tanner (SUBM)
CIF
GDS
Oklahoma State (SUBM3)
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SCN3ME_SUBM
Magic
NCSU CDK
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1 MOSIS has not issued SCMOS design rules for some
vendor-supported options. Most non-standard options (for example,
medium threshold voltage) are available only for projects designed
using the vendor set of layers and rules.
2 Virginia Tech offers a standard cell library for the TSMC
0.25 micron process technology based on MOSIS SCMOS_DEEP rules for use
with Synopsys synthesis and Cadence place-and-route tools.
3 The Oklahoma State University standard cell library for
the ON Semi 0.5, TSMC 0.25 and 0.18 micron process technologies is based
on SCMOS_SUBM rules for use with Synopsys' synthesis tools and Cadence
Design Systems' (CDS) Silicon Ensemble place-and-route tools.
4 The NCSU design kit contains LVS, HSpice. The Diva DRC
deck contains all rules from the MOSIS SCMOS User's Manual 8.0 except
for some DEEP rules and wide-metal rules.
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Related Links
EDA Tools (Union College)
Tale
of an IC Design Engineer (SJSU)
Design
Resources and Cadence Tutorials (SJSU)
Cadence Tutorial (Worcester
Polytechnic Institute)
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