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MOSIS Supported Options
IBM 5DM Process

Options Notes Part Number
Base Features for SiGeHP/SiGe5s0   21L1597
DC Decoupling Capacitor   29L5017
Schottky Diode   21L1938
Varactor Diode   45L8349
PIN Diode   45L8350
HA Junction Varactor Hyper-Abrupt (VR, VI) 70P1280
RI Resistor Ion Implant 29L5019
RP Resistor Low Tc Polysilicon 29L5021
NS Resistor N+ Subcollector 45L8354
RN Resistor N-type reach through 45L8353
FR Resistor 1500 Ohm/sq. 29L5022
TaN BEOL Resistor   57P7613
NFET Transistor 3.3 V 29L5024
PFET Transistor 3.3 V 29L5015
Gated Lateral PNP   45L8351
Dual MiM CAP 5LMQ3/H3 57P7611
Varactor   57P7614
MOS Varactor NFET in NWell 57P7614
5LM M1, M2, MT, E1, MA 01L6952
MA Last Metal 57P5769
F1BAR   57P5770
Vx Via   01L6986
LV   01L6998
Wirebond   01L6995
C4 Plated * 01L6993

* Subject to availability at additional cost. Advance notice required by contacting support@mosis.com.



Related Links
  • IBM 5DM Process
  • IBM Technology Codes
  • MOSIS-Supported IBM Processes



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