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MOSIS Supported Options
IBM 5DM Process
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Options
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Notes
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Part Number
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Base Features for SiGeHP/SiGe5s0
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21L1597
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DC Decoupling Capacitor
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29L5017
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Schottky Diode
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21L1938
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Varactor Diode
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45L8349
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PIN Diode
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45L8350
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HA Junction Varactor
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Hyper-Abrupt (VR, VI)
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70P1280
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RI Resistor
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Ion Implant
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29L5019
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RP Resistor
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Low Tc Polysilicon
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29L5021
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NS Resistor
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N+ Subcollector
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45L8354
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RN Resistor
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N-type reach through
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45L8353
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FR Resistor
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1500 Ohm/sq.
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29L5022
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TaN BEOL Resistor
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57P7613
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NFET Transistor
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3.3 V
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29L5024
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PFET Transistor
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3.3 V
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29L5015
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Gated Lateral PNP
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45L8351
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Dual MiM CAP
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5LMQ3/H3
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57P7611
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Varactor
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57P7614
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MOS Varactor
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NFET in NWell
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57P7614
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5LM
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M1, M2, MT, E1, MA
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01L6952
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MA
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Last Metal
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57P5769
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F1BAR
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57P5770
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Vx Via
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01L6986
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LV
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01L6998
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Wirebond
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01L6995
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C4 Plated
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*
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01L6993
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* Subject to availability at additional cost. Advance notice required by
contacting support@mosis.com.
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Related Links
IBM 5DM Process
IBM Technology
Codes
MOSIS-Supported IBM Processes
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