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MOSIS Supported Options
IBM 7HP Process

Options Notes Part Number
Base Features for BiCMOS7HP   20F8322
ThinOx High Vt 525 mV (1.8 V) 20F8326
ThickOx NFET 660 mV (2.5 V and 3.3 V)
ThinOx Regular Vt (1.8 V)
ThinOx High Vt 530 mV (1.8 V) 20F8329
ThickOx PFET 740 mV (2.5 V and 3.3 V)
ThinOx Regular Vt (1.8 V)
Regular Vt Triple Well NFET (PI) 66P7680
Thick Ox Triple Well NFET (PI,DE) 66P7681
PC Polysilicon Resistor over n-subcollector 1600 +-25% Ohm/square 20F8330
PC Polysilicon Resistor over deep trench 1600 +-25% Ohm/square 20F8331
PC Polysilicon Resistor 1600 +-25% Ohm/square 57P4863
TaN Metal Resistor (K1) 142 +-10% Ohm/square 20F8333
N+ Active (non-silicided) Resistor OP NDIFF 46L0743
P+ Active (non-silicided) Resistor OP PDIFF 46L0745
P+ Poly (non-silicided) Resistor OP PPOLY 46L0744
P+ Poly (non-silicided) over deep trench Resistor OP PPOLY over DT 37R9296
P+ Poly (non-silicided) over n+ subcollector Resistor OP PPOLY over NS 37R9297
N+ Subcollector Resistor NS 45L8354
AM-1 MiMCAP (QY) 1.0 +-15% fF/µm² 20F8334
5LM M1, M2, MT, LY, AM 01L6952
AM (required) 4 µm thick 06K3730
LY (required) 1.25 µm thick 70P8026
MT (required)   20F8338
V1 + V2 via (required)   05N9526
VY via   20F8337
AV via   06K3731
DV   29L5231
Wirebond   01L6995
LV * 01L6998
C4 Plated * 01L6993

* Subject to availability at additional cost. Advance notice required by contacting support@mosis.com.



Related Links
  • IBM 7HP Process
  • IBM Technology Codes
  • MOSIS-Supported IBM Processes



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