|
|
IBM Semiconductor
0.13 Micron
8HP SiGe BiCMOS Process
8HP MPW Prices
Information vital to preparing and submitting a design for fabrication
in this process has been posted to the MOSIS
Secure Document Server.
All users must read the checking procedures and density
requirements described in this document.
If your design will be used for production, i.e. non-MPW, please read
the IBM policy described in
"Checking and
Error Disposition Strategy for IBM Designs."
Process Description
MOSIS is offering access to the IBM 0.13 micron SiGe 8HP technology
for prototype and low volume fabrication.
C4 (IBM's flip chip bumping) is subject to availability at additional
cost. Advance notice required: contact
support@mosis.com.
This BiCMOS SiGe process offers up to 7 metal layers. MOSIS is
supporting 5 metal layers (M1, M2, MQ, LY, AM). Supply voltages are
1.2/2.5 V core and 2.5 V I/O.
8HP Supported Options
Please refer to the
List of 8HP Supported
Options page for the options available by default on MOSIS MPW
runs in this technology.
Other configurations are available for dedicated runs, or on MPW runs
by prior arrangement. Please contact
MOSIS support for additional details, e.g. costs.
Design Considerations
To insure that submitted data is on a 10 nm grid, please stream-out at
1 DBU = 10 nm (Cadence 0.010, not 0.001).
MOSIS does not fill for IBM processes. Designs for IBM runs must meet
the IBM fill requirements when submitted.
IBM Design Rules, Process Specifications, SPICE Parameters, and
Cell Libraries
IBM has sub-licensed MOSIS to distribute this information to
selected customers.
The CAD tool support files, DRC and LVS decks, simulation files, cell
libraries, and files listed on the
IBM SiGe Design
Kits page are the only kits and files available.
Design rules supported by this technology
Only the IBM design rules will be supported for this
technology.
MOSIS Technology Codes
The technology code for the 8HP process is IBM_8HP.
Parametric Test Results and SPICE Model Parameters
See
Test Results for IBM 0.13 micron runs.
Reticle/Wafer Size, Steps, Die and Wafer Thickness
IBM SiGe 0.13 Micron
8HP Process
|
Wafer Size
(inches)
|
Reticle Size (milli- meters, approx.)
|
Reticle Copies Stepped on Wafer (approx.)
|
Turn- around Time*
|
Die Thickness
(+/- .5 mil)
|
Bumped Die Thickness **
(+/- .5 mil)
|
Wafer Thickness
|
|
Mils
|
Micro- meters
|
Mils
|
Micro- meters
|
Mils
|
Micro- meters
|
|
8
|
18 x 20
|
60
|
71
|
10
|
250
|
10
|
250
|
30
|
760
|
* Calendar days from release to manufacturing. Does not include
dicing/packaging/backlapping (for planning purposes only).
** Die thickness only. Does not include height of the bumps.
To order a special bumped die thickness, describe
your requirements in the SPECIAL-HANDLING parameter of your New
Project, Fabrication, or Update Request.
IBM Microelectronics
|
Related Links
MOSIS-Supported IBM Processes
IBM Technology
Codes & Layer Maps
IBM Document Access
|
|
|
