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Options
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Masks
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Part Number
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Base Features for CMOS 9LP
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40N1869
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N-well and p-well in substrate and an isolated p-well
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BF, N3
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93P2028
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Thin + thick oxide
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DG
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93P2055
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Thin-oxide zero-Vt NFET
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DE
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41K8368
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Thick-oxide zero-Vt NFET
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DE, DG
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41K8370
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Regular-Vt + low-Vt + high-Vt + super high-Vt + 1.8V and/or 2.5V I/O NFET
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XW, NR, HN, DG, JN, DE
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41K8308
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Regular-Vt + low-Vt + high-Vt + super high-Vt + 1.8V and/or 2.5V I/O PFET
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LW, PR, HP, DG, JP, DF
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41K8312
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P+ polysilicon OP resistor
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OP
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06K7940
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N+ diffusion OP resistor
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OP
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41K9348
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N-well resistor
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17R4145
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Thin-oxide NFET in n-well capacitor (NCAP)
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41K8371
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Thin-oxide PFET in p-well capacitor (PCAP)
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PCAP, N3
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41C10092
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Thick-oxide NCAP
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DG
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41K8372
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Vertical natural capacitor (VNCAP)
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27R6144
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Electrostatic discharge (ESD) devices
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OP
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27R3217
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Vertical PNP bipolar transistor
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OP
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17R4146
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SRAM cell
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SH
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41K9347
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Electrically programmable fuse (eFUSE)
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57P6150
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Precision RP resistor
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OP, RP
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41C10102
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DV
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Wirebond only
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29L5231
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Aluminum wire bond
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VV, (LB, LD), DV
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01L6995
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LV
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C4 only
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01L69981
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Plated C4 (flip-chip)
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VV, (LB, LD), LV, TM
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01L69931
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Digital Stack
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Masks
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Part Number
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Two 2x copper levels in a TEOS/FTEOS dielectric with LB
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WT, BA, WA, BB, VV
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17R4149
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Six Cu metal levels plus LB
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29L6986
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Nitride MiM capacitor
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HT, QT
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41K93792
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Analog Stack2
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Masks
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Part Number
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One 2x copper level in TEOS/FTEOS with 12x thick copper and LD
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WT, BA, JT, OL, VV, LD
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44K22012
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Six Cu metal levels, including LD
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29L69862
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BEOL inductor with LD, OL
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IND
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44K30852
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Single High-K MiM capacitor
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HK, QK
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44K58752
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Metal Stacks
Other configurations subject to availability with sufficient
notice to support@mosis.com.
9-Metal Digital Metal Stack
9LB_6_02_00_00
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LB
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Bond metal
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VV
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M2_2B
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V1_2B
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2x thick metals
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M1_2B
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V0_2B
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M6
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V5
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M5
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V4
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M4
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V3
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M3
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1x thin metals
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V2
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M2
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V1
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M1
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CA
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8-Metal Analog Metal Stack
8LD_5_01_00_01
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LD
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Bond metal
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VV
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OL
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12x metal
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JT
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M1_2B
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2x thick metal
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V0_2B
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M5
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V4
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M4
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V3
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M3
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1x thin metals
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V2
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M2
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V1
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M1
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CA
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Restricted Options
Contact
support@mosis.com if you're
interested in any of these restricted options2.
-
BEOL inductor with LB topmetal (70P6164)
-
High-gain NFET and PFET
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3,3 V I/O NFET and PFET
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Hyper-abrupt varactor
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Silicided poly resistor
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TaN BEOL Resistor (44K5767)
1 Subject to availability at additional cost. Advance notice required by
contacting support@mosis.com.
2 This device can only be fabricated at one of IBM's foundries. All
other devices can be fabricated at any one of the
Common
Platform (CP) foundries. The CP is a collaboration between IBM
and several other foundries to provide advanced feature size
fabrication. Irrespective of which foundry is used, the designer can
be assured that their parts will behave as if they were fabricated at
IBM.
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