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Options
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Masks
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Part Number
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Base Features for CMOS 9SF
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57P8182
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N-well and p-well in substrate and an isolated p-well
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BF, N3
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93P2028
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Thin + intermediate + thick oxide
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EG, DG
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93P2057
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Thin-oxide zero-Vt NFET
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DE
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93P2085
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Intermediate-oxide zero-Vt NFET
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DE, EG, DG
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93P2086
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Thick-oxide zero-Vt NFET
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DE, DG
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93P2087
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Regular-Vt + low-Vt + eMPU + 1.8-V and/or 2.5-V I/O + 3.3-V I/O NFET
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NV, XW, FN, JN
DE, DG, XE, XR
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27R3039
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Regular-Vt + low-Vt + eMPU + 1.8-V and/or 2.5-V I/O + 3.3-V I/O PFET
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PV, LW, FP, JP
DF, DG
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27R3079
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P+ polysilicon OP resistor
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OP
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06K7940
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N+ diffusion OP resistor
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ON, OP
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39N1678
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Precision Poly Resistor
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RP
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27R6143**
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Thin-oxide NFET in n-well capacitor (NCAP)
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PV
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27R3163
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Intermediate-oxide NFET in n-well Capacitor
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EG, NCAP
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27R3162**
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Thin-oxide PFET in p-well capacitor (PCAP)
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N3
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27R3251**
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Thick-oxide NCAP
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PV, DG
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17R4143
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N-well to substrate capacitor
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27R3166
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Junction varactor option p+/n-well junction varactor
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39N6415
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VN/VPP capacitor option Back-end-of-line (BEOL) capacitor that uses
the M1-M6, M1_2B, M2_2B metal levels
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27R6144
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Electrostatic discharge (ESD) devices
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OP
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27R3217
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Vertical PNP bipolar transistor
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OP
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17R4146
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No static random access memory (SRAM) cell
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No embedded dynamic random access memory (DRAM)
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27R4232
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Two 2x copper levels in a TEOS/FTEOS dielectric
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LB BA, BB, LB, VV, WA, WT
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17R4149
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Eight metal levels (8LM),
6_02_00 stack
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M1, V1, M2, V2, M3, V3, M4, V4, M5, V5, M6, V0_2B, M1_2B, V1_2B,
M2_2B
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57P5833
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Electrically programmable fuse (eFUSE)
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57P6150
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Aluminum wire bond
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VV, LB
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01L6995
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Plated C4 (flip-chip)
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VV, LB, TM
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01L6993*
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DV
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For Wirebond only
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29L5231
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LV
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For C4 only
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01L6998*
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* Subject to availability at additional cost. Advance notice required by
contacting support@mosis.com.
** Devices denoted as IBM_ONLY.
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MOSIS Supported Metal Stack
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LB
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Bond metal
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VV
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M2_2B
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V1_2B
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2x thick metals
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M1_2B
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V0_2B
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M6
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V5
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M5
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V4
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M4
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V3
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1x thin metals
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M3
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V2
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M2
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V1
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M1
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CA
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