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IBM SiGe & CMOS Processes
These IBM processes support ITAR regulated
designs.
MOSIS has compiled the following chart comparing various features to
help you better select which IBM process is most appropriate to your
applicaiton.
IBM SiGe BiCMOS Processes
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Feature Size
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Process Name
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CMOS
Vdd [V]
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SiGe
Ft [GHz] | BVceo(1) [V]
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Description
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High Performance
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High Breakdown
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0.13 µm
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8HP
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1.2, 2.5, 3.3
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200 | 1.77
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57 | 3.55
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5th generation SiGe technology for advanced RADAR and mmWave applications.
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8WL
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1.2, 2.5, 3.3
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103 | 2.4
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54 | 4.7
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Reduced performance, cost effective technology for wireless applications.
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0.18 µm
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7HP
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1.8, 2.5, 3.3
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120 | 2.0
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20 | 4.75
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4th generation SiGe technology best suited for wireless and high-speed
switches.
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7WL
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1.8, 2.5, 3.3
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60 | 3.3
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29 | 6.0
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Reduced performance, yet most cost effective SiGe technology offered.
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0.25 µm
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6HP/6DM
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2.5, 3.3
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47 | 3.3
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27 | 5.7
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3rd generation SiGe technology.
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6WL
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2.5, 3.3
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60 | 3.2
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29 | 6.0
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A descendant of 7WL, it integrates 0.25 µm CMOS with the 7WL SiGe NPN.
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0.35 µm
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5HPE
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3.3, 5.0
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43 | 3.3
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19 | 9.6
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2nd generation SiGe technology with 0.35 µm CMOS and 0.5 µm
SiGe NPN's.
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5PAe
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3.3, 5.0
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35 | 5.5
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25 | 7.5
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Intended for power amplifier applications, this process features
Through Wafer Vias.
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0.50 µm
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5HP
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3.3
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51 | 3.3
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27 | 5.5
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1st generation SiGe technology.
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5AM
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3.3
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51 | 3.3
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27 | 5.5
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Similar to 5HP, but adds a thick top metal.
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5DM
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3.3
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51 | 3.3
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27 | 5.5
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Similar to 5HP but adds two thick top metals for high-Q inductors.
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5PA
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3.3
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51 | 3.3
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24 | 7.0
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Similar to 5AM, this process adds higher voltage NPN's for power amplifier applications.
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A process comparison including Ft and Fmax can be found at the
IBM BiCMOS Key Technology Specifications page.
(1) BVceo is not a voltage limit for biasing
unless the NPN is operating under a forced Ib condition.
Vce greater than BVceo is allowed for other bias
configurations, lower base impedance leading to higher voltage limits.
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IBM CMOS and
IBM RF CMOS Processes
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Feature Size
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Process Name
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Voltage (V)
Core | I/O
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Description
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45 nm
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12SOI
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1.0 | 0.9
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This energy-saving SOI process is suitable for a broader range of
consumer electronics, including digital TVs and high-end mobile
applications.
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65 nm
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10SF
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1.0 | 1.8, 2.5
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Excellent for consumer electronics, wireless communications, and other
applications requiring high performance or system-on-a-chip.
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10LPe/RFe
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1.2 | 2.5
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Tailored for power-sensitive applications in wireless communications
and consumer electronics.
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90 nm
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9SF
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1.0 | 2.5
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Ideal for leading-edge microprocessors, communications, and computer
data processing applications.
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9LP/RF
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1.2 | 2.5
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Use for low-cost, high performance wireless applications, as
Bluetooth, WLAN, cellular handsets, mobile TV, WiMax, UWB and GPS.
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130 nm
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8RF-DM
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1.2 | 2.5
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Use for low-cost, high performance wireless applications as Bluetooth,
WLAN, cellular handsets and GPS.
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8RF-LM
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1.2 | 2.5
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Similar to 8RF-DM, but uses LM top metal.
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180 nm
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7SF
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1.8 | 3.3
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Use for high-performance graphics, communications, and data
processing applications.
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7RF
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1.8 | 3.3
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Ideally suited for RF and wireless applications, as Bluetooth,
LANs, cellular phones and RF identification tags.
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7HV
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1.8/5/20/50 |
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Ideal solution for power management products, display drivers, printer
and MEMS driver ICs.
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7RF SOI
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1.8 | 3.3
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Optimized for RF switch applications, integrate multiple analog
functions into single-chip solutions for mobile devices.
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250 nm
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6RF
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2.5 | 3.3
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This RF CMOS process is adapted for high frequency applications with a
variety of passives (as high Q inductors, MIM and MOS capacitors, and
MOS varactors) for mixed-signal and RF applications.
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Design Interfaces
You can request the IBM design kit (design rules, models, and
Cadence and Agilent ADS design kits) by following the
instructions on the MOSIS web site at
IBM Design
Rules, Process Specifications, and SPICE Parameters page.
ADS support for IBM is RFDE/Dynamic-Link, and can only be used
together with the IBM Cadence design environment.
Design interface (design kit, services) are available for these
processes.
IBM Microelectronics Foundry IBM Business Partners
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Related Links
IBM Design Kits For CMOS Processes
IBM Design Kits For SiGe Processes
IBM Technology
Technology Codes & Layer Maps
IBM Document Access
ITAR Instructions
Checking and Error Disposition
IBM Taxi Runs
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