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MOSIS Fabrication Processes
Technology descriptions, fabrication schedules, and vendor document
access procedures for the ON Semi, austriamicrosystems, IBM, TSMC, ON
Semi, austriamicrosystems, and Peregrine fabrication processes
available through MOSIS.
IBM Fabrication Processes
The IBM fabrication processes available through MOSIS
range from 65 nanometer to 0.25 µm in CMOS, and from
0.13 µm to 0.50 µm in SiGe BiCMOS.
TSMC Fabrication Processes
The TSMC logic and mixed-mode fabrication processes available
through MOSIS include 0.35 µm CMOS, 0.25 µm CMOS,
0.18 µm CMOS, and 0.13 µm CMOS.
ON Semiconductor Fabrication Processes
The ON Semi processes available through MOSIS include 0.7 µm
high voltage CMOS, 0.5 µm CMOS, and 0.35 µm high
voltage CMOS.
austriamicrosystems Fabrication Processes
Processes offered by MOSIS through austriamicrosystems include
0.35 µm CMOS, high voltage CMOS, and SiGe BiCMOS.
Peregrine Fabrication Processes
The Peregrine fabrication processes available through MOSIS include
both 0.50 µm SOS process (FC and FA), and the two versions
of the 0.25 µm SOS process (GA and GC).
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For more information about MOSIS fabrication processes, please contact
support@mosis.com.
Related Links
MOSIS Fabrication Schedule
Customer Support
MOSIS Products
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