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Wafer Electrical Test Data and SPICE Model Parameters
MOSIS provides electrical test data and SPICE parameters for most wafer lots.
Lot-specific parametric results and SPICE device model parameters are extracted from measurements on wafers probed at MOSIS.
SPICE level 3 model parameters for classroom instructional purposes, not for actual IC design work are also available.
Active Processes
| Vendor | Feature Size | Process |
|---|---|---|
| IBM | 0.50 micron | 5HP |
| 5AM | ||
| 5DM | ||
| 5PA | ||
| 0.35 micron | 5HPE | |
| 5PAe | ||
| 0.25 micron | 6RF | |
| 6HP | ||
| 6DM | ||
| 0.18 micron | 7RF | |
| 7HP | ||
| 7WL | ||
| 7RF SOI | ||
| 7HV | ||
| 0.13 micron | 8RF | |
| 8HP | ||
| 8WL | ||
| 90 nanometer | 9SF | |
| 9LP/9RF | ||
| 65 nanometer | 10SF | |
| 10LPe/10RFe | ||
| 45 nanometer | 12SOI | |
| 32 nanometer | 32SOI | |
| ON Semiconductor | 1.50 micron | ABN [inactive] |
| 0.50 micron | C5 | |
| TSMC | 0.35 micron | CL035/CM035 |
| 0.25 micron | CL025/CR025/CM025 | |
| 0.18 micron | CL018/CR018/CM018 |