The MOSIS Service
More than 50,000 designs in 25 years of operation
Processes - Schedule - Prices - Web Forms - Contacts - Site Map
Home --> Support --> MOSIS Publications

General Information
About MOSIS
Products
Processes
Prices
Support
User Group
Events
Job Openings
News

Work with MOSIS
Getting Started
Design and Test

Requests
Run Status
Project Status
Test Data

Docs and Forms
Documents
Forms/Agreements
Web Forms

Quick Reference
New Users
Experienced Users
Purchasing Agents
Design and Test
Academic Institutions
Export Program
Submit A Project

Search MOSIS

MOSIS Technical Documents
Publications By MOSIS Staff


Journal Papers
  1. P. T. Vernier and M. J. Ziegler. 2007. Nanosecond field alignment of head group and water dipoles in electroporating phospholipid bilayers.. J Phys Chem B 111:12993-12996.

  2. Marshall, J. C., and P. T. Vernier. 2007. Electro-physical technique for post-fabrication measurements of CMOS process layer thicknesses. J. Res. Natl. Inst. Stand. Technol. 112:223-256.

  3. Marshall, J. C., D. L. Herman, P. T. Vernier, D. L. DeVoe, and M. Gaitan. 2007. Young's modulus measurements in standard IC CMOS processes using MEMS test structures. Electron Device Letters, IEEE 28:960-963.

  4. Shih, M. H., A. Mock, M. Bagheri, N. K. Suh, S. Farrell, S. J. Choi, J. D. O'Brien, and P. D. Dapkus. 2007. Photonic crystal lasers in InGaAsP on a SiO2/Si substrate and its thermal impedance. Optics Express 15:227-232.

  5. E. Cumberbatch, H. Abebe, and Hedley Morris, Current-Voltage characteristics from an asymptotic analysis of the MOSFET equations. Journal of Engineering Mathematics, Kluwer Academic Publishers (a part of Springer). Vol. 39, PP. 25-46, March (2001).

  6. H. Abebe, E. Cumberbatch, V. Tyree, and H. Morris, MOSFET device modeling using methods of asymptotic analysis. Internet Journal ElectronicsLetters.com (a part of Elektrorevue journal), ISSN 1213-161X, May 20, (2003).

  7. H. Morris, E. Cumberbatch, V. Tyree and H. Abebe, Analytical results for the I-V characteristics of a fully depleted SOI-MOSFET. IEE Proc. Circuits, Devices & Systems, Vol. 152, Issue 6, P. 630-632, December (2005).

  8. E. Cumberbatch, H. Abebe and Uno, S, Nano-Scale MOSFET device modeling with quantum mechanical effects. EJAM, Cambridge University Press, (2006). (Accepted).

  9. H. Abebe, V. Tyree, H. Morris and P. T. Vernier, SPICE BSIM3 model parameter extraction and optimization: Practical consideration. IJEEE, Manchester University Press. (Accepted and it'll appear in the July issue, Vol. 44, No. 3, (2007)).

  10. Liu, Y. S., Y. Sun, P. T. Vernier, C. H. Liang, S. Y. C. Chong, and M. A. Gundersen, pH-sensitive photoluminescence of CdSe/ZnSe/ZnS quantum dots in human ovarian cancer cells, J. Phys. Chem. C, in press, 2007.

  11. Sun, Y., Y. S. Liu, P. T. Vernier, C. H. Liang, S. Y. Chong, L. Marcu, and M. A. Gundersen, Photostability and pH sensitivity of CdSe/ZnSe/ZnS quantum dots in living cells, Nanotechnology 17:4469-4476, 2006.

  12. Sun, Y., P. T. Vernier, M. Behrend, J, Wang, M. M. Thu, M. A. Gundersen, and L. Marcu, Fluorescence microscopy imaging of electroperturbation in mammalian cells, J. Biomed. Optics, 11:24010, 2006.

  13. Vernier, P. T., Y. Sun, and M. A. Gundersen, Nanoelectropulse-driven membrane perturbation and small molecule permeabilization, BMC Cell Biology 7:37, 2006.

  14. Vernier, P. T., M. J. Ziegler, Y. Sun, W. V. Chang, M. A. Gundersen, and D. P. Tieleman, Nanopore formation and phosphatidylserine externalization in a phospholipid bilayer at high transmembrane potential, J. Am. Chem. Soc. 128:6288-6289, 2006.

  15. Vernier, P. T., Y, Sun, M. J. Ziegler, D. P. Tieleman, and M. A. Gundersen, Nanopore-facilitated, voltage-driven phosphatidylserine translocation in lipid bilayers in vitro and in silico, Physical Biology 3:233-247, 2006.

  16. Sun, Y., P. T. Vernier, M. Behrend, L. Marcu, and M. A. Gundersen, Electrode microchamber for noninvasive perturbation of mammalian cells with nanosecond pulsed electric fields, IEEE Trans. Nanobiosci.,4:277-283, 2005.

  17. Kuthi, A., P. Gabrielsson, M. Behrend, P. T. Vernier, and M. A. Gundersen, Nanosecond pulse generator using fast recovery diodes for cell electromanipulation, IEEE Trans. Plasma Sci. 33:1192-1197, 2005.

  18. Vernier, P. T., Y. Sun, L. Marcu, C. M. Craft, and M. A. Gundersen, Nanoelectropulse-induced phosphatidylserine translocation, Biophys. J. 86:4040–4048, 2004.

  19. Vernier, P. T., Y. Sun, L. Marcu, C. M. Craft, and M. A. Gundersen, Nanosecond pulsed electric fields perturb membrane phospholipids in T lymphoblasts, FEBS Lett. 572:103–108, 2004.

  20. Vernier, P. T., M. Thu, L. Marcu, C. M. Craft, and M. A. Gundersen, Nanosecond electroperturbation — mammalian cell sensitivity and bacterial spore resistance, IEEE Trans. Plasma Sci. 32:1620–1625, 2004.

  21. Behrend, M., A. Kuthi, X. Gu, P. T. Vernier, L. Marcu, C. M. Craft, and M. A. Gundersen, Pulse generators for pulsed electric field exposure of biological cells and tissues, IEEE Trans. Dielect. Elect. Ins. 10:820–825, 2003.

  22. Vernier, P. T., A. Li, L. Marcu, C. M. Craft, and M. A. Gundersen, Ultrashort pulsed electric fields induce membrane phospholipid translocation and caspase activation: differential sensitivities of Jurkat T lymphoblasts and rat glioma C6 cells, IEEE Trans. Dielect. Elect. Ins. 10:795–809, 2003.

  23. Vernier, P. T., Y. Sun, L. Marcu, S. Salemi, C. M. Craft, and M. A. Gundersen, Calcium bursts induced by nanosecond electric pulses, Biochem. Biophys. Res. Commun. 310:286–295, 2003.


Refereed And Reviewed Conference Proceedings:
  1. H. Abebe and E. Cumberbatch, Quantum mechanical effects correction models for inversion charge and current-voltage (I-V) characteristics of the MOSFET device. Proceedings 2003 Nanotechnology Conference, Vol 2, pp 218-221, February 23-27, (2003). San Francisco, CA, USA.

  2. H.C. Morris, M De Pass and H. Abebe, Analytic formulae for the impact ionization rate for use in compactmodels of ultra-short semiconductor devices. Proceedings 2004 Nanotechnology Conference, Vol. 2, pp140-143, March 7-11, (2004), Boston, Massachusetts, USA.

  3. H.C. Morris and H. Abebe, MOSFET analytical substrate current model for circuit simulation. Proceedings 2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 1, pp162-165, August 14-17, (2004), Austin, Texas, USA.

  4. H. Abebe and E. Cumberbatch, Modeling quantum effects on MOSFET channel surface potential. Proceedings 2004 International Conference on Computing, Communications and Control Technologies: CCCT'04, Vol. 7, pp198-201, August 14-17, (2004), Austin, Texas, USA.

  5. H. Abebe, E. Cumberbatch, V. Tyree and H. Morris, MOSFET Analytical Inversion Charge Model with Quantum Effects Using a Triangular Potential Well Approximation. Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 64-67, Anaheim, CA, May 8-12, (2005).

  6. E. Cumberbatch, H. Abebe, H. Morris and V. Tyree, Analytical Surface Potential Model with Polysilicon Gate Depletion Effect for NMOS. Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 57-60, Anaheim, CA, May 8-12, (2005).

  7. H. Morris, E. Cumberbatch and H. Abebe, SOS Gate Capacitance Modeling. Proceedings 2005 Nanotechnology Conference, Vol. 3, pp. 68-71, Anaheim, CA, May 8-12, (2005).

  8. H. Abebe, V. Tyree, E. Cumberbatch and H. Morris, A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET. The 9th World Multi-Conference, WMSCI Proceedings, Vol. 6, pp. 211-214, Orlando, FL, July 10-13, (2005). (Selected as the BEST PAPER in the session).

  9. H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, Analytical Modeling of Impact Ionization and Polysilicon Gate Depletion Effects for Application in Circuit Simulation. The 9th World Multi-Conference, WMSCI Proceedings, Vol. 3, pp. 319-323, Orlando, FL, July 10-13, (2005).

  10. H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, Analytical models for quantized sub-band energy levels and inversion charge centroid for MOS structures derived from asymptotic and WKB approximations. Proceedings 2006 Nanotechnology Conference, Vol. 3, pp. 519-522, May 7-11, (2006), Boston, Massachusetts, USA.

  11. H. Morris, H. Abebe, E. Cumberbatch and Uno, S., Compact models for double gate and surround gate MOSFETs. Proceedings 2006 Nanotechnology Conference, , Vol. 3, pp. 824-827, May 7-11, (2006), Boston, Massachusetts, USA.

  12. H. Abebe, E. Cumberbatch, H. Morris and V. Tyree, Numerical and analytical results of the polysilicon gate depletion effect on MOS gate capacitance, IEEE UGIM Proceedings, pp. 111-115, June 25-28, (2006), San Jose, CA.

  13. H. Morris, E. Cumberbatch, H. Abebe and V. Tyree, Compact modeling for the I-V characteristics of double gate and surround gate MOSFETs, IEEE UGIM Proceedings, pp. 117-121, June 25-28, (2006),San Jose, CA.

  14. Vernier, P. T., Y. Sun, J. Wang, M. M. Thu, E. B. Garon, M. Valderrabano, L. Marcu, H. P. Koeffler, and M. A. Gundersen, Nanoelectropulse intracellular perturbation and electropermeabilization technology: phospholipid translocation, calcium bursts, chromatin rearrangement, cardiomyocyte activation, and tumor cell sensitivity. Proceedings of the 27th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, Shanghai, 2005.
Conference Abstracts:
  1. Henok Abebe and Ellis Cumberbatch, Modeling quantum effects on current/voltage characteristics of a MOSFET transistor, 4th SoCAMS Symposium, April 24, (2004), Claremont, CA, USA.

  2. Uno, S., H. Abebe, and E. Cumberbatch, Analytical solutions to quantum drift-diffusion equation for quantum mechanical modeling of MOS structures, Solid State Device and Materials, Sep. 12-15, extended abstracts pp. 592-593, Kobe, Japan, (2005).

  3. Uno, S, H. Abebe and E. Cumberbatch, Analytical formulae of quantum-mechanical electron density in inversion layer in planar MOSFETs. IWCM 2006, p.25, January 24, (2006), Pacifico Yokohama, Yokohama, Japan.




Related Links
  • MOSIS Library
  • MOSIS FAQs
  • MOSIS Technical Notes
  • Resources on the Internet



  • Looking for something special? Check our Site Map or Search MOSIS.
    Privacy Statement

    The MOSIS Service
    4676 Admiralty Way
    Marina del Rey, California 90292-6695 USA
    Contact MOSIS