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MOSIS Technical Notes

BSIM3v3.1 Model Parameter Extraction & Optimization (pdf)

ESD_Implant for TSMC Processes

How to obtain ON Semiconductor design rules, process specifications, and SPICE parameters

How to use the MOSIS Document Server

Mask Data Prep and Manhattan Layout

MOSIS and MEMS Technology

PGA Socket and Board

Polygons and Winding Numbers

Removing Passivation

Reliability in CMOS IC Design: Physical Failure Mechanisms and their Modeling (pdf)

Sub-minimum Features Not Allowed


To expand the coverage and utility of the MOSIS Technical Notes we invite contributions from MOSIS users.

Submissions that will be considered for electronic publication in the MOSIS Technical Notes may be on any topic of potential use to MOSIS users, such as instructional papers with design examples, general or tool-specific hints for designers, undocumented but essential design flow details, mistakes to avoid, tricks to try.

Send your contribution in text, HTML, or PDF format to mosis-tech-notes@mosis.com.




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