MOSIS Supported Options
IBM 10LPe/10RFe CMOS Process
| Options | Masks | Part Number |
|---|---|---|
|
Base Features for CMOS 10LPL
(CMOS10LPe) Low Power |
||
|
N-well and p-well in substrate
and an isolated p-well |
BF, N3 | |
| ACLV gate orientation option | Horizontal | |
| Oxide option Thin + thick oxide | DG | |
|
Regular-Vt + native-Vt + low-Vt
+ high-Vt + regular DG I/O NFET |
NV, NR, DG, DE, JN | |
|
Regular-Vt + low-Vt + high-Vt + regular DG I/O PFET |
PV, PR, DG, DF |
|
| Thin-oxide NCAP | ||
| Thick-oxide NCAP | DG | |
| Thin-oxide PCAP | N3 | |
| P+ polysilicon OP resistor | OP | |
| N+ diffusion OP resistor | OP | |
| N-well resistor | ||
| Electrostatic discharge (ESD) devices | OP | |
| Vertical natural capacitor (VNCAP) | ||
| Precision p+ polysilicon RP resistor | RP | 2 |
| Asymmetrical Drain FETs (ADFETs) | KN, KP | 2 |
| Hyper-Abrupt (HA) Junction Varactor | JD | |
| Vertical PNP bipolar transistor | OP | |
| Standard SRAM | NR, PR | |
| Electrically programmable eFUSE | ||
| Passivation | LV (C4 only) | 01L6953¹ |
| DV (Wirebond only) | 01L6995 | |
| Digital Stack | Masks | Part Number |
| Inductor option | Native, thick wire inductor | |
|
Three 2x copper levels in a low-K dielectric
and one 4x level with LB |
W0, B1, W1, B2, W2,
B3, YT, EA, VV, LB |
2 |
| Eight Cu metal levels plus LB | ||
| Nitride MiM capacitor | HT, QT | 2 |
| Analog Stack2 | Masks | Part Number |
|
One 2x copper level in TEOS/FTEOS
with 12x thick copper and LD |
WT, BA, JT, OA, VV, LD | 2 |
| Eight Cu metal levels, including LD | 2 | |
| BEOL inductor with JT, LD, OA | 2 | |
| Nitride MiM capacitor | HT, QT | 2 |
Metal Stacks
These are the configurations availability for the July 26, 2010, MPW run.
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1 Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System posted to support.mosis.com
2 This device can only be fabricated at one of IBM's foundries. All other devices can be fabricated at any one of the Common Platform (CP) foundries. The CP is a collaboration between IBM and several other foundries to provide advanced feature size fabrication. Irrespective of which foundry is used, the designer can be assured that their parts will behave as if they were fabricated at IBM.