MOSIS Supported Options
IBM 10SF CMOS Process
Unless stated otherwise, all options listed below are available on MPW runs without additional cost. Other configurations are available for dedicated runs, or on MPW runs by prior arrangement. Please contact MOSIS support for additional details, e.g. costs.
| Feature Group | Option Descriptions | Additional Masks | Part Number |
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| Base Features for CMOS 10SF | Always included | 42K0610 | |
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| Well | N-well and p-well in substrate and an isolated p-well | BF, N3 | 93P2028 |
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| ACLV Gate Orientation | Horizontal | 42K4493 | |
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| Oxide | Thin oxide only | 75H3168 | |
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Thin + medium + thick oxide | EG, DG | 93P2057 |
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| Fet | Low-Vt + zero-Vt + regular-Vt + high-Vt + regular I/O + high-speed I/O NFET | DG, EG, XW, NV, NR, IN, JN, GN, DE | 32N9767 |
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| Low-Vt + regular-Vt + high-Vt + regular I/O + high-speed I/O PFET | DG, EG, LW, PV, PR, IP, JP, GP, DF | 32N9840 | |
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| Capacitor | Thin-oxide NCAP | PV | 27R3163 |
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| Medium-oxide NCAP | EG, IP | 32N9935 | |
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| Thick-oxide NCAP | DG, JP | 32N9936 | |
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| Thin-oxide PCAP | NV, N3 | 42K4899 | |
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| Resistor | P+ polysilicon OP resistor | OP, ZJ | 45X5057 |
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| N+ diffusion OP resistor | OP | 41K9348 | |
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| N-well resistor | 17R4145 | ||
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| Precision p+ polysilicon RP resistor | RP | 27R6143 | |
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| TaN resistor | K1 | 44K5809 | |
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| VN Capacitor | VNCAP (BEOL capacitor) | 27R6144 | |
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| Bipolar | Vertical PNP bipolar transistor | NV | 42K4201 |
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| Inductor option | Native, thick wire inductor | 70P6164 | |
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| SRAM | Standard SRAM | 44K5850 | |
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| Fuse | Electrically programmable fuse (eFUSE) | 57P6150 | |
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| Wiring | Three 2x low-k and two 4x wiring with LB | WO, B1, W1, B2, W2, B3, YT, EA, YA, EB, VV, LB | 42K4298 |
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| Metalization | 10LB (4_30_02_00) | M1, V1, M2, V2, M3, V3, M4, W0, B1, W1, B2, W2, B3, YT, EA, YA, EB | 57P5833 |
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| Final Protection | Wirebond only | DV | 29L5231 |
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| C4 only | LV | 01L6998 2 | |
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| Bonding | Aluminum wire bond | [to LB] | 01L6995 |
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| C4 plated (flip-chip) | TM | 01L6993 2 | |
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1 Part number available after T2 qualification. Features
marked limited have some restrictions on use. The base feature part
number represents standard processing for that technology. To ensure
the correct manufacturing of each part, a list of features must be
supplied to manufacturing. This table is intended to assist designers
in providing the necessary information to MOSIS. Feature availability
and limitations are shown here for reference only and might
change. Features must be evaluated based on current information as
part of the ordering process.
2 Contact support@mosis.com for pricing and further information. |
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| MOSIS Supported Metal Stack | |||||
| 10LB_4_30_02_00 | |||||
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LB |
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Bond metal | |
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EB |
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| YA |
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4x thick metals (in TEOS/FTEOS) | |
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EA |
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| YT |
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B3 |
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| W2 |
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B2 |
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2x thick metals (in low-k) | |
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B1 |
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| W0 |
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M4 |
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M3 |
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| V2 |
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1x thin metals | |
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M2 |
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| V1 |
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M1 |
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| CA |
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