Products > Fab Processes > IBM > 12SOI > IBM 12SOI Process
MOSIS Supported Options
IBM 12SOI Process
Unless stated otherwise, all options listed below are available on MPW runs without additional cost. Other configurations are available for dedicated runs, or on MPW runs by prior arrangement. Please contact MOSIS support for additional details, e.g. costs.
| Feature Group | Option Descriptions |
Additional
Masks |
Part
Number |
|---|---|---|---|
| Base Features for SiGe12SO | Always included | 46E2350 | |
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| Oxide | 1.5 / 1.8 V Thick Oxide | DG | 49J3211 |
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| NFET Vt | High-Vt NFET | NR | 49J3780 |
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| Super high-Vt NFET | NM | 49J3782 | |
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| Ultra high-Vt NFET | UN | 49J3783 | |
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| Extra high-Vt NFET | IG, IN | 49J3784 | |
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| PFET Vt | High-Vt PFET | PR | 49J4248 |
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| Super high-Vt PFET | PM | 49J4250 | |
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| Ultra high-Vt PFET | UP | 49J4251 | |
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| Extra high-Vt PFET | IG, IP | 49J4285 | |
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| Transistor | Analog BC NFET | KF, NR, QF | 49J4313 |
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| Analog BC PFET | NF, PR | 49J4314 | |
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| Thick oxide, floating NFET | DG, KF, DE | 49J4315 | |
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| Thick oxide, floating PFET | DG, NF, DF | 49J4316 | |
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| Thick oxide BC NFET | DG, KF, NR, DE | 49J4317 | |
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| Thick oxide BC PFET | DG, NF, PR, DF | 49J4318 | |
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| Analog floating NFET | QF | 49J7774 | |
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| Analog floating PFET | 49J7775 | ||
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| Annular diode | Annular diode | DG, NF, DF | 49J5595 |
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| ESD | Gate ESD non-salicided ESD NFET (GNS SBLK NFET) | OP | 49J5596 |
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| Polybound ESD diode | DG, NF | 49J5597 | |
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| Silicide-block bound ESD diode (SBLK) | DG, NF, OP | 49J5598 | |
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| ESD SCR | DG, NF, OP | 49J8278 | |
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| Resistor | OP P+ RR polysilicon resistor | OP, RR | 41M7501 |
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| Capacitor | Thick-oxide DECAP | DG, NF, PR | 49J4431 |
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| Varactor (UGNCAP) | 49J5553 | ||
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| SRAM | 0.404 µm2 P404 cell (M2 BL, M4 GND) | NV, PV, AD | 49J8279 |
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| 0.462 µm2 S462 cell (M1 BL, M2 GND) | NV, PV, AX | 49J8280 | |
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| 0.404 µm2 G404 cell (M2 BL, M2 GND) | NV, PV, BJ | 49J8281 | |
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| 0.315 µm2 P315 cell | CL, PV, BM | 49J8282 | |
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| 0.608 µm2 DP608 cell | CL, PV, BM | 49J8284 | |
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| 1.064 µm2 TCAM cell | CL, PV, BM | 49J8916 | |
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| 0.635 µm2 N635 8T cell | NV, PV, AX | 49J9980 | |
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| Embedded DRAM | No embedded DRAM | 27R4232 | |
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| Embedded DRAM | DT, NB, HB | 49J8915 | |
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| Metallization |
10LM metallization stack (Option 8)
3_2_3_0_0_2 (M1, V1, M2, V2, M3, AY, C1, A1, C2, W0, B1, W1, B2, W2, B3, TA, UA, GA, UB, VV, LB) |
93P1796 | |
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| Fuse | Electrical fuse (eFUSE) | 57P6150 | |
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| BEOL Capacitor | VNCAP capacitor | 27R6144 | |
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| Miscellaneous BEOL | BEOL inductor | 70P6164 | |
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| TCOIL3 inductor | 49J7878 | ||
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| Bonding Option | Wirebond | DV | 29L5231 |
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| C4 | * | 01L6998* | |
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| * Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System posted to http://support.mosis.com | |||