Products > Fab Processes > IBM > 5DM > 5DM Supported Options
MOSIS Supported Options
IBM 5DM Process
| Options | Notes | Part Number |
|---|---|---|
| Base Features for SiGeHP/SiGe5s0 | 21L1597 | |
| DC Decoupling Capacitor | 29L5017 | |
| Schottky Diode | 21L1938 | |
| Varactor Diode | 45L8349 | |
| PIN Diode | 45L8350 | |
| HA Junction Varactor | Hyper-Abrupt (VR, VI) | 70P1280 |
| RI Resistor | Ion Implant | 29L5019 |
| RP Resistor | Low Tc Polysilicon | 29L5021 |
| NS Resistor | N+ Subcollector | 45L8354 |
| RN Resistor | N-type reach through | 45L8353 |
| FR Resistor | 1500 Ohm/sq. | 29L5022 |
| TaN BEOL Resistor | 57P7613 | |
| NFET Transistor | 3.3 V | 29L5024 |
| PFET Transistor | 3.3 V | 29L5015 |
| Gated Lateral PNP | 45L8351 | |
| Dual MiM CAP | 5LMQ3/H3 | 57P7611 |
| Varactor | 57P7614 | |
| MOS Varactor | NFET in NWell | 57P7614 |
| 5LM | M1, M2, MT, E1, MA | 01L6952 |
| MA | Last Metal | 57P5769 |
| F1BAR | 57P5770 | |
| Vx Via | 01L6986 | |
| LV | 01L6998 | |
| Wirebond | 01L6995 | |
| C4 Plated | * | 01L6993 |
| * Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System posted to MOSIS Support | ||