Products > Fab Processes > IBM > 5PAE > 5PAE Supported Options
MOSIS Supported Options
IBM 5PAE Process
| Options | Notes | Part Number |
|---|---|---|
| Thin Oxide + 5.0 V Thick Oxide | DG | |
| Triple Well Isolated NFET (thin oxide) | PI | |
| 5.0 V NFET | DG, DP, DE | |
| 5.0 V PFET | DG, DN | |
| Schottky Barrier Diode | ||
| PIN Diode | ||
| MOS Varactor (thin oxide) | ||
| MOS Varactor (thick oxide) | DG | |
| P+ Poly Resistor | ||
| Silicided Poly Resistor | ||
| L1 BEOL Resistor | L1 | |
| Thick Oxide MOS Capacitor | DG | |
| Single Nitride MIM | 1.35 fF/µm² (QT) | |
| Dual Nitride MIM | 2.70 fF/µm² (QT, HT) | |
| 4LM | M1, V1 | |
| Dual Metal | MT, FT, E1, F1, MA | |
| Thru Wafer Via | OV, SV, MS | |
| Electronic Fuse (eFuse) | ||
| Wirebond | DV | |
| C4 Plated | ** | 01L6993 |
|
* Part numbers are not available at this time.
** Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System posted to http://support.mosis.com/ |
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