Products > Fab Processes > IBM > 6WL > 6WL Supported Options
MOSIS Supported Options
IBM 6WL Process
| Options | Masks | Part Number |
|---|---|---|
| Base Features for BiCMOS6WL (SiGe6WL) | 44J5507 | |
|
|
||
| Thick Oxide + 3.3 V Thick Oxide | DG | 43T9645 |
|
|
||
| 3.3 V I/O NFET | DG, DE, DP | 43T9647 |
|
|
||
| 3.3 V I/O PFET | DG, DN | 43T9649 |
|
|
||
| SP NPN (required) | 39N8576 | |
|
|
||
| 2.5 V Triple Well NFET | PI | 57P5768 |
|
|
||
| 3.3 V Triple Well NFET | PI, DG, DE, DP | 43T9663 |
|
|
||
| PCDCAP (thin ox) | 06K7942 | |
|
|
||
| Hyper-Abrupt Junction Varctor | JD | 70P4610 |
|
|
||
| nMOS Varactor (thin ox) | 57P7614 | |
|
|
||
| DI Diode | 70P0106 | |
|
|
||
| OP PE Polysilicon Resistor 3800 +/-25% Ohms/square | 07K2998 | |
|
|
||
| P+ Polysilicon Resistor 210 +/- 15% Ohms/square | 57P6029 | |
|
|
||
| P+ S/D Resistor 100 +/- 15% Ohms/square | 57P6030 | |
|
|
||
| N+ S/D Resistor 63 +/- 10% Ohms/square | 57P6031 | |
|
|
||
| Precision Polysilicon Resistor 152 Ohms/square | RP | 70P4619 |
|
|
||
| 5LM | 01L6952 | |
|
|
||
| Dual Metallization | MT, FT, E1, F1, MA | 44K1363 |
|
|
||
| Stacked Metal (VNCAP) Capacitor | 27R6144 | |
|
|
||
| High K Dielectric MIM 4.1 fF/µm² | QT | 43T9935 |
|
|
||
| Electronic Fuse | 57P6150 | |
|
|
||
| Wirebond | DV | 29L5231 |
|
|
||
| C4 Plated | LV | 01L6995* |
|
|
||
| * Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System posted to support.mosis.com | ||