Products > Fab Processes > IBM > 7RF SOI > 7RF SOI Supported Options
MOSIS Supported Options
IBM 7RF SOI Process
Unless stated otherwise, all options listed below are available on MPW runs without additional cost. Other configurations are available for dedicated runs, or on MPW runs by prior arrangement. Please contact MOSIS Support for additional details, e.g. costs.
| Feature Group | Option Description |
Additional
Masks |
Part
Number |
|---|---|---|---|
| Base Features for CMOS 7RF SOI | Always included | 44J5512 | |
|
|
|||
| FET | Thin Oxide FET | BH, PH, DG | 49J6173 |
|
|
|||
| Thick Oxide FET 2.5 V | 1 | ||
|
|
|||
| High Breakdown Thick Oxide NFET (dgnfet_cns) | CN | 70Y3637 | |
|
|
|||
| Capacitor | Thick Oxide MOS Varactor | 70P7902 | |
|
|
|||
| Resistor | High-value Polysilicon Resistor | RR | 57P4863 |
|
|
|||
| P+ Polysilicon Resistor | 46L1235 | ||
|
|
|||
| Diode | Thick Oxide ESD Diode | 49J6197 | |
|
|
Forward Bias Diode | 49J6196 | |
|
|
|||
| Fuse | Electronic Fuse (e-Fuse) | 57P61502 | |
|
|
|||
| MiM Capacitor | Single MiM (2.05 fF/µm²) | QT | 70P4618 |
|
|
|||
| High Voltage Dual MiM (0.52 fF/µm²) | QT, HT | 59Y1149 | |
|
|
|||
| Metalization | 4LM | M1, MT, AM | 01L6950 |
|
|
|||
| AM Last Metal | AM | 70P5485 | |
|
|
|||
| Bonding Type | Wirebond | DV | 01L6995 |
|
|
|||
| C4 Plating | LV | 01L69933 | |
|
1 These are Base Feature Devices and no additional masks are required. 2 Option may not yet be qualified for reliability, or models are not correlated to hardware at this time. Please check the current manual for status. 3 Subject to availability at additional cost. Advance notice required by contacting MOSIS Support |
|||