Products > Fab Processes > IBM > 8HP > 8HP Supported Options
MOSIS Supported Options
| Options | Notes | Part Number |
|---|---|---|
| Base Features for SiGe8HP | 70P8901 | |
| Thin Oxide + Thick Oxide | 1.2 / 2.5 V (DG) | 70P0331 |
| Thin Triple Well NFET | 1.2 V (PI) | 70P7900 |
| Thick Oxide Triple Well NFET | 2.5 V (PI/DG) | 70P7901 |
| Thin-Ox Decoupling Cap | PCDCAP | 75H3027 |
| Thin-Oxide Varactor | NFET-in-Nwell | 75H3089 |
| Thick-Oxide Decoupling Cap | PCDCAP25 | 75H3219 |
| Thick-Oxide Varactor | NFET-in-NWell | 70P7902 |
| Only Regular Vt devices supported | 75H2982 75H3093 | |
| Higher Breakdown NPN | ~3.5 V (DS) | 27R4768 |
| Hyper Abrupt Varactor Diode | (JD) | 70P7907 |
| P+ Poly Resistor | 340 ± 51 Ω/sq. | 46L0744 |
| High Value Poly Resistor | 1700 ± 340 Ω/sq. (RR) | 57P4863 |
| N+ Subcollector Resistor | 8.8 ± 1.32 Ω/sq. | 45L8354 |
| TaN BEOL Resistor | 60.5 ± 4.8 Ω/sq. (KQ) | 27R4771 |
| MiM capacitor | 1.0 ± 15% fF/µm² (QY) | 20F8334 |
| Electronic Fuse (eFuse) | 57P6150 | |
| 5 Metal Layers | M1, V1, M2, V2, M3, V3, M4, VL, MQ, VY, LY, AV, AM | 29L6986 |
| Wirebond | DV | 01L6995 |
| C4 Plated bumps | * | 01L6993* |
|
Layers in parentheses indicate optional masks, but all supported for MPW's.
* Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Support System |
||