MOSIS Supported Options

Unless stated otherwise, all options listed below are available on MPW runs without additional cost. Other configurations are available for dedicated runs, or on MPW runs by prior arrangement. Please contact MOSIS support for additional details, e.g. costs.

Feature Group Option Descriptions Additional Masks Part Number Base Features for CMOS 9LP Always included   40N1869 Well N-well and p-well in substrate and an isolated p-well BF, N3 93P2028 Oxide Thin + thick oxide DG 93P2055 Zero-Vt Thin-oxide zero-Vt NFET DE 41K8368 Thick-oxide zero-Vt NFET DE, DG 41K8370 FET Regular-Vt + low-Vt + high-Vt + super high-Vt + 1.8 V and/or 2.5 V I/O NFET XW, NR, HN, DG, JN, DE 41K8308 Regular-Vt + low-Vt + high-Vt + super high-Vt + 1.8 V and/or 2.5 V I/O PFET LW, PR, HP, DG, JP, DF 41K8312 Resistor P+ polysilicon OP resistor OP 06K7940 N+ diffusion OP resistor OP 41K9348 N-well resistor   17R4145 Precision RP resistor OP, RP 41C10102 Capacitor Thin-oxide NFET in n-well capacitor (NCAP)   41K8371 Thin-oxide PFET in p-well capacitor (PCAP) PCAP, N3 41C10092 Thick-oxide NCAP DG 41K8372 Vertical natural capacitor (VNCAP)   27R6144 Miscellaneous Electrostatic discharge (ESD) devices OP 27R3217 Vertical PNP bipolar transistor OP 17R4146 SRAM SRAM cell SH 41K9347 Fuse Electrically programmable fuse (eFUSE)   57P6150 Bonding Aluminum wire bond VV, (LB, LD), DV 01L6995 Plated C4 (flip-chip) VV, (LB, LD), LV, TM 01L69931 Final Protection Wirebond only DV 29L5231 C4 only LV 01L69981 Metalization: Digital Stack Two 2x copper levels in a TEOS/FTEOS dielectric with LB WT, BA, WA, BB, VV 17R4149 Six Cu metal levels plus LB   29L6986 Nitride MiM capacitor HT, QT 41K93792 Metalization: Analog Stack2 One 2x copper level in TEOS/FTEOS with 12x thick copper and LD WT, BA, JT, OL, VV, LD 44K22012 Six Cu metal levels, including LD   29L69862 BEOL inductor with LD, OL IND 44K30852 Nitride MiM capacitor HT, QT 41K93792 Available but not qualified3 BEOL inductor with LB topmetal (digital stack)   70P6164 Thin-oxide high-gain NFET KN 27R6145 Thin-oxide high-gain PFET KP 27R6146 3.3 V I/O NFET DG, JN, XE 44K7056 3.3 V I/O PFET DG, JP, DF 44K7057 Hyper-abrupt varactor JD 57P5776 Silicided poly resistor SILPCRES 44K5768 TaN BEOL Resistor K5 44K5766 Metal Stacks 4 9-Metal Digital Metal Stack 9LB_6_02_00_00   LB     Bond metal VV       M2_2B       V1_2B       2x thick metals M1_2B       V0_2B       M6     V5       M5     V4       M4     V3       M3     1x thin metals V2       M2     V1       M1     CA       8-Metal Analog Metal Stack 8LD_5_01_00_01   LD     Bond metal VV       OL     12x metal JT       M1_2B       2x thick metal V0_2B       M5     V4       M4     V3       M3     1x thin metals V2       M2     V1       M1     CA       1 Subject to availability at additional cost. Advance notice required by contacting MOSIS via the MOSIS Customer Support System 2 This device can only be fabricated at one of IBM's foundries. All other devices can be fabricated at any one of the Common Platform (CP) foundries. The CP is a collaboration between IBM and several other foundries to provide advanced feature size fabrication. Irrespective of which foundry is used, the designer can be assured that their parts will behave as if they were fabricated at IBM. 3 These options may not yet be qualified for reliability, or models are not correlated to hardware at this time. Please check the current manual for status. 4 Other configurations subject to availability with sufficient notice to MOSIS Customer Supports.

Related Resources

MOSIS-Supported IBM Processes

IBM Technology Codes & Layer Maps

IBM Document Access