MOSIS Supported Options
IBM 9SF CMOS Process
| Options | Masks | Part Number |
|---|---|---|
| Base Features for CMOS 9SF | 57P8182 | |
| N-well and p-well in substrate and an isolated p-well | BF, N3 | 93P2028 |
| Thin + intermediate + thick oxide | EG, DG | 93P2057 |
| Thin-oxide zero-Vt NFET | DE | 93P2085 |
| Intermediate-oxide zero-Vt NFET | DE, EG, DG | 93P2086 |
| Thick-oxide zero-Vt NFET | DE, DG | 93P2087 |
| Regular-Vt + low-Vt + eMPU + 1.8-V and/or 2.5-V I/O + 3.3-V I/O NFET |
NV, XW, FN, JN
DE, DG, XE, XR |
27R3039 |
| Regular-Vt + low-Vt + eMPU + 1.8-V and/or 2.5-V I/O + 3.3-V I/O PFET |
PV, LW, FP, JP
DF, DG |
27R3079 |
| P+ polysilicon OP resistor | OP | 06K7940 |
| N+ diffusion OP resistor | ON, OP | 39N1678 |
| Precision Poly Resistor | RP | 27R6143** |
| Thin-oxide NFET in n-well capacitor (NCAP) | PV | 27R3163 |
| Intermediate-oxide NFET in n-well Capacitor | EG, NCAP | 27R3162** |
| Thin-oxide PFET in p-well capacitor (PCAP) | N3 | 27R3251** |
| Thick-oxide NCAP | PV, DG | 17R4143 |
| N-well to substrate capacitor | 27R3166 | |
| Junction varactor option p+/n-well junction varactor | 39N6415 | |
| VN/VPP capacitor option Back-end-of-line (BEOL) capacitor that uses the M1-M6, M1_2B, M2_2B metal levels | 27R6144 | |
| Electrostatic discharge (ESD) devices | OP | 27R3217 |
| Vertical PNP bipolar transistor | OP | 17R4146 |
| No static random access memory (SRAM) cell | ||
| No embedded dynamic random access memory (DRAM) | 27R4232 | |
| Two 2x copper levels in a TEOS/FTEOS dielectric | LB BA, BB, LB, VV, WA, WT | 17R4149 |
|
Eight metal levels (8LM),
6_02_00 stack |
M1, V1, M2, V2, M3, V3, M4, V4, M5, V5, M6, V0_2B, M1_2B, V1_2B, M2_2B | 57P5833 |
| Electrically programmable fuse (eFUSE) | 57P6150 | |
| Aluminum wire bond | VV, LB | 01L6995 |
| Plated C4 (flip-chip) | VV, LB, TM | 01L6993* |
| DV | For Wirebond only | 29L5231 |
| LV | For C4 only | 01L6998* |
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* Subject to availability at additional cost. Advance notice required by
contacting MOSIS via the MOSIS Support System
** Devices denoted as IBM_ONLY. |
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| MOSIS Supported Metal Stack | |||||
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LB |
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Bond metal | |
| VV |
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M2_2B |
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| V1_2B |
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2x thick metals | |
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M1_2B |
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| V0_2B |
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M6 |
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| V5 |
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M5 |
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| V4 |
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M4 |
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| V3 |
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1x thin metals | |
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M3 |
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| V2 |
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M2 |
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| V1 |
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M1 |
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| CA |
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